澳门·新莆京(中国)游戏大厅-ios/安卓/手机版app下载

学术成果

2022年

106. Y.H. Zheng#, T.J. Xin#, J. Yang, Y.Z. Zheng, Z.M. Gao, Y.W. Wang, Y.L. Xu, Y. Cheng*, K. Du, D.Q. Su, R.W. Shao, B.X. Zhou, Z. Yuan, Q.L. Zhong, C. Liu, R. Huang, X.D. Tang, C.G. Duan, S.N. Song, Z.T. Song, H.B. Lyu*. In-situ atomic-level observation of reversible first-order transition in Hf_0.5Zr_0.5O₂ ferroelectric film. IEEE International Electron Devices Meeting (IEDM), 2022: 6-3.

105. T.J. Xin#, Y.H. Zheng#, Y. Cheng*, K. Du, Y.W. Wang, Z.M. Gao, D.Q. Su, Y.Z. Zheng, Q.L. Zhong, C. Liu, R. Huang, C.G. Duan, S.N. Song, Z.T. Song, H.B. Lyu*. Atomic visualization of the emergence of orthorhombic phase in Hf_0.5Zr_0.5O₂ ferroelectric film with in-situ rapid thermal annealing.Symposium on VLSI Technology, 2022: T7-4.

104. Y. Cheng#, Z.M. Gao#, K.H. Ye, H.W. Park, Y.H. Zheng, Y.Z. Zheng, J.F. Gao, M.H. Park, J.H. Choi, K.H. Xue, C.S. Hwang*, H.B. Lyu*. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO₂-based ferroelectric thin films. Nature Communications, 2022, 13: 645.

103. C. Liu#, Q.Y. Tang#, Y.H. Zheng*, B. Zhang, J. Zhao, W.X. Song, Y. Cheng*, Z.T. Song. The origin of hexagonal phase and its evolution process in Ge₂Sb₂Te₅ alloy. APL Materials, 2022, 10: 021102.

102. C. Yoo, J.W. Jeon, S. Yoon,Y. Cheng, G. Han, W. Choi, B. Park, G. Jeon, S. Jeon, W. Kim, Y. Zheng, J. Lee, J. Ahn, S. Cho, S.B. Clendenning, I.V. Karpov, Y.K. Lee, J.H. Choi, C.S. Hwang. Atomic layer deposition of Sb₂Te₃/GeTe superlattice film and its melt-quenching-free phase-transition mechanism for phase-change memory. Advanced Materials, 2022, 2207143.

2021年

101. Y.Z. Zheng#, Y.H. Zheng#, Z.M. Gao, J.H. Yuan, Y. Cheng*, Q.L. Zhong, T.J. Xin, Y.W. Wang, C. Liu, Y.R. Huang, R. Huang, X.S. Miao, K.H. Xue^*, H.B. Lyu^*. Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf_0.5Zr_0.5O₂ films: vacancy generation and lattice dislocation. IEEE International Electron Devices Meeting (IEDM), 2021: 33-5.

100. Y.Z. Zheng^#, C.R. Zhong^#, Y.H. Zheng, Z.M. Gao, Y. Cheng*, Q.L. Zhong, C. Liu, Y.W. Wang, R.J. Qi, R. Huang, H.B. Lyu^*. In-situ atomic visualization of structural transformation in Hf_0.5Zr_0.5O₂ ferroelectric thin film: from nonpolar tetragonal phase to polar orthorhombic phase. Symposium on VLSI Technology, 2021: T16-3.

99.Y. Cheng*, Y.H. Zheng, Z. T. Song, Reversible switching in bicontinuous structure for phase change random access memory application. Nanoscale, 2021, 13: 4678-4684.

98.Y.H. Zheng, Z. Chen, H. Lu, Y. Cheng*, X. Chen, Y.B. He*, Z.L. Zhang*. The formation of TiO₂/VO₂ multilayer structure via directional cationic diffusion. Nanoscale, 2021, 13: 7783-7791.

97.Q.L. Zhong, Y.W. Wang, Y. Cheng*, Z.M. Gao, Y.Z. Zheng, T.J. Xin, Y.H. Zheng, R. Huang, H.B. Lyu*. Optimization of the in situ biasing FIB sample preparation for hafnia-based ferroelectric capacitor. Micromachine, 2021, 12: 1436.

96.Z.M. Gao, Y.B. Luo, S.X. Lyu, Y. Cheng, Y.H. Zheng, Q.L. Zhong, W.F. Zhang*, H.B. Lyu*. Identification of ferroelectricity in capacitor with ultra-thin (1.5 nm) Hf_0.5Zr_0.5O₂ film. IEEE Electron Device Letters, 2021, 42: 1301-1306.

95. Z.T. Song, D.L. Cai, Y. Cheng, L. Wang, S.L. Lv, T.J. Xin, G.M. Feng. 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip. Nanoscale, 2021, 13: 10455-10461.

94.W.Q. Xu, Y.H. Zheng, Y. Cheng, R.J. Qi*, H. Peng, H.C. Lin, R. Huang*. Understanding the effect of Al doping on the electrochemical performance improvement of the LiMn2O4 cathode material. ACS Applied Materials Interfaces, 2021, 13: 45446-45454.

93.Q.L. Zhong, X. Deng, L.N. Lin, H.L. Song, Y.Z. Zheng, Y. Cheng, P.H. Xiang, N. Zhong, R.J. Qi, C.G. Duan, R. Huang. Revealing a high-density three-dimensional Ruddlesden-Popper-type fault network in an SmNiO₃ thin film. Journal of Materials Research, 2021, 12: 1436.

92.W.Q. Xu, H.K. Li, Y.H. Zheng, W.B. Lei, Z.G. Wang, Y. Cheng, R.J. Qi, H. Peng, H.C. Lin, F.Y. Yue, R. Huang. Atomic Insights into Ti Doping on the Stability Enhancement of Truncated Octahedron LiMn₂O₄ Nanoparticles. Nanomaterials, 2021, 11: 508.

91.W.Q. Xu, Y.H. Zheng, L.N. Lin, W.B. Lei, Z.G. Wang, H.L. Song, Y. Cheng, R.J. Qi, H. Peng, H.C. Lin, Z.Z. Yang, R. Huang. Atomic Insights into Surface Orientations and Oxygen Vacancies in the LiMn₂O₄ Cathode for Lithium Storage. Journal of Alloys and Compounds, 2021, 870: 159387.

2020年

90.W.X. Song#, Y. Cheng#, D.L. Cai, Q.Y. Tang, Z.T. Song*, L.H. Wang, J. Zhao, T.J. Xin and Z. P. Liu. Improving the performance of phase-change memory by grain refinement. Journal of Applied Physics, 2020, 128: 075101.

89.Q. Luo#, Y. Cheng#, J.G. Yang, R.R. Cao, H.L. Ma, Y. Yang, R. Huang, W. Wei, Y.H. Zheng, T.C. Gong, J. Yu, X.X. Xu, P. Yuan, X.Y. Li, L. Tai, H.R. Yu, D.S. Shang, Q. Liu, B. Yu, Q.W. Ren, H.B. Lv*, M. Liu*. A highly CMOS compatible hafnia-based ferroelectric diode. Nature Communications, 2020, 11: 1391.

88.Y. Cheng*, D.L. Cai#, Y.H. Zheng#, S. Yan, L. Wu, C. Li, W.X Song*, T.J. Xin, S.L. Lv, R. Huang, H.B. Lv, Z.T. Song* and S.L. Feng. Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory. ACS Applied Materials & Interfaces, 2020, 12: 23051-23059.

87.C.R. Zhong#, R.J. Qi#, Y.H. Zheng, Y. Cheng*, W.X. Song* and R. Huang. The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector. Micromachines, 2020, 11: 588.

86.Q.Y. Tang#, T.Z. He#, K. Yu, Y. Cheng*, R.J. Qi*, R. Huang, J. Zhao, W.X. Song and Z.T. Song. The effect of thickness on texture of Ge₂Sb₂Te₅ phase-change films. Journal of Materials Science: Materials in Electronics, 2020, 31:5848-5853.

85.Y.H. Zheng#, R.J. Qi#, Y. Cheng* and Z.T. Song. The crystallization mechanism of Zirconium doped Sb₂Te₃ material for phase change random-access memory application.Journal of Materials Science: Materials in Electronics, 2020, 31:5861-5865.

84.R.J. Qi# and Y. Cheng*. Synthesis of Se nanowires at room temperature using selenourea as Se source. Journal of Materials Science: Materials in Electronic, 2020, 31:5843-5847.

83.Y. Xue, Y. Cheng, Y.H. Zheng, S. Yan, W.X. Song, S.L. Lv, S.N. Song*, Z.T. Song*. Phase change memory based on Ta-Sb-Te alloy-towards a universal memory. Materials Today Physics, 2020, 15: 100266.

82.H.L. Song, C. Li, C.-K. Wang, J.-C. Yang, J.J. Lin, L. Sun, Y. Cheng, R.J. Qi, R. Huang, Y.-H. Chu, C.-G. Duan. Revealing a metastable cubic phase in CoFe₂O4–SrTiO₃ three-dimensional network heteroepitaxial nanostructure. Journal of Applied Physics, 2020, 128: 225303.

81.L.N. Lin, X.Y. Feng, D.P. Lan, Y. Chen, Q.L. Zhong, C. Liu, Y. Cheng, R.J. Qi, J.P. Ge, C.Z. Yu, C.-G. Duan, R. Huang. Coupling Effect of Au Nanoparticles with the Oxygen Vacancies of TiO_2-x for Enhanced Charge Transfer. Journal of Physical Chemistry C, 2020, 124: 23823-23831.

80.C. Liu#, J. Wang#, J.J. Wan*, Y. Cheng, R. Huang, C.Q. Zhang, W.L. Hu, G.F. Wei* and C.Z. Yu*. Angewandte Chemie-International Edition, 2020, 59: 3630-3637.

2019年

79.Y.H. Zheng, Y. Wang, T.J. Xin, Y. Cheng*, R. Huang, P. Liu, M. Luo, Z.L. Zhang, S.L. Lv, Z.T. Song* and S.L. Feng. Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge₂Sb₂Te₅. Communications Chemistry, 2019, 2: 13.

78.K. Ren*, Y. Cheng*, M.J. Xia, S.L. Lv and Z.T. Song. In-situ observation of Ge₂Sb₂Te₅ crystallization at the passivated interface. Ceramics International, 2019, 45: 19542-19546.

77.Q. Luo, J. Yu, X.M. Zhang, K.H. Xue, J.H. Yuan, Y. Cheng, T.C. Gong, H.B. Lv*, X.X. Xu, P. Yuan, J.H. Yin, L. Tai, S.B. Long, Q. Liu, X.S. Miao, J. Li and M. Liu*. Nb_1-xO₂ based universal selector with ultra-high endurance (>10¹²), high speed (10ns) and excellent V_th stability, 2019 Symposium on VLSI Technology, 2019, T236-T237.

76.W.X. Zhang, H. Song, Y. Cheng, C. Liu, C.H. Wang, M.A.N. Khan, H. Zhang, J.Z. Liu, C.Z. Yu*, L.J. Wang, and J.S. Li*. Core–Shell Prussian Blue Analogs with Compositional Heterogeneity and Open Cages for Oxygen Evolution Reaction. Advanced Science. 2019, 6(7):1801901.

75.X. Chen, X.Q. Liu*, Y. Cheng and Z.T. Song*. The impact of vacancies on the stability of cubic phases in Sb-Te binary compounds. NPG Asia Materials, 2019, 11: 40.

74.Y. Wang, T.Q. Guo, G.Y. Liu, T. Li, S.L. Lv, S.N. Song, Y. Cheng, W.X. Song, K. Ren and Z.T. Song*. Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power-Consumption. ACS Applied Materials & Interfaces, 2019, 11(11): 10848-10855.

73.L.N Lin, Y.L. Ma, J.B. Wu*, F. Pang, J.P. Ge*, S. Sui, Y.F. Yao, R.J. Qi, Y. Cheng, C.G. Duan, J.H. Chu and R. Huang*, Origin of Photocatalytic Activity in Ti⁴⁺/Ti³⁺ Core–Shell Titanium Oxide Nanocrystals. Journal of Physical Chemistry C, 2019, 123, 34: 20949.

72.C.R. Zhong, L.N. Lin, R.J. Qi, Y. Cheng, X.S. Gao, R. Huang*. Plan-view Sample Preparation of a Buried Nanodots Array by FIB with Accurate EDS Positioning in Thickness Direction. Ultramicroscopy, 2019, 207: 112840.

71.M.X. Jia, Z.Q. Ren, Y.D. Liu, Y. Cheng, R. Huang, P.H. Xiang, X.D. Tang, B.B. Tian, N. Zhong* and C.G. Duan. Ferroelectric polarization-controlled resistive switching in BaTiO₃/SmNiO₃ epitaxial heterostructures. Applied Physics Letters, 2019, 114: 102901.

71.Y. Wang, T.B. Wang, G.Y. Liu, T.Q. Guo, T. Li, S.L. Lv, Y. Cheng, S.N. Song, K. Ren and Z.T. Song*. High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping. Scripta Materialia, 2019, 164: 25-29.

2018年

70.X. Chen, Y.H. Zheng, M. Zhu, K. Ren, Y. Wang, T. Li, G.Y. Liu, T.Q. Guo, L. Wu, X.Q. Liu, Y. Cheng* and Z.T. Song. Scandium doping brings speed improvement in Sb₂Te alloy for phase change random access memory application. Scientific Reports, 2018, 8: 6839.

69.Q. Luo, T.C. Gong, Y. Cheng, Q.Z. Zhang, H.R. Yu, J. Yu, H.B. Lv^*, H.L. Ma, X.X. Xu, K.L. Huang, X. Zhu, D.N. Dong, J.H. Yin, P. Yuan, L. Tai, J.F. Gao, J.F. Li, H.X. Yin, S.B. Long, Q. Liu, M. Liu^*, Coexistence of Charge Trapping and Domain Switching in 14nm FE-FinFET for 1T DRAM and Embedded Non-volatile Memory Application. IEEE International Electron Devices Meeting (IEDM), 2018.

68.C. Li, H.L. Song, Y.W. Shen, Y.F. Wang, Y. Cheng, R.J. Qi, S.Y. Chen, C.G. Duan and R. Huang. Evolution of cation ordering and crystal defects controlled by Zn substitutions in Cu₂SnS₃ ceramics, AIP Advances, 2018, 8: 105322.

67.C. Li, Y.W. Shen, H.L. Song, Y.F. Wang, S.Y. Chen, R.J. Qi, Y. Cheng, C.G. Duan and R. Huang. Microstructure of Cu₂S nanoprecipitates and its effect on electrical and thermal properties in thermoelectric Cu₂Zn_0.2Sn_0.8S₃ ceramics. AIP Advances, 2018, 8: 085105.

66.T.Q. Guo, S.N. Song, Z.T. Song, X.L. Ji, Y. Xue, L.L. Chen, Y. Cheng, B. Liu, L.C. Wu, M. Qi, S.L. Feng. SiC-Doped Ge₂Sb₂Te₅ Phase-Change Material: A Candidate for High-Density Embedded Memory Application. Advanced Electronic Materials, 2018, 4: 1800083.

65.Y. Wang, Y.H. Zheng, G.Y. Liu, T. Li, T.Q. Guo, Y. Cheng, S.L. Lv, S.N. Song, K. Ren^*, Z.T. Song^*, Scandium doped Ge₂Sb₂Te₅ for high-speed and low-power-consumption phase change memory. Applied Physics Letters, 2018, 112: 133104.

64.Y. Wang, T.B. Wang, Y.H. Zheng, G.Y. Liu, T. Li, S.L. Lv, W.X. Song, S.N. Song, Y. Cheng, K. Ren^*, Z.T. Song, Atomic scale insight into the effects of Aluminum doped Sb₂Te for phase change memory application. Scientific Reports, 2018, 8: 15136.

2017年

63.Y.H. Zheng, Y. Cheng*, R. Huang, R.J. Qi, F. Rao*, K.Y. Ding, W.J. Yin, S.S. Song, W.L. Liu, Z.T. Song and S.L. Feng. Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge₂Sb₂Te₅ Thin Film. Scientific Reports, 2017, 7: 5915.

62.K. Ren, Y. Cheng*, X. Chen, K.Y. Ding, S.L. Lv, W.J. Yin, X.H. Guo, Z.G. Ji and Z.T. Song*. Carbon layer application in phase change memory to reduce power consumption and atomic migration. Materials Letters, 2017, 206: 52-55.

61.L. Zhang, S.N. Song, H. Lin, Y. Cheng, W. Xi, L. Li, Y. He, Z.T. Song. Local structure characteristics of Sb₂Te₃ films studied by reverse Monto Carlo modeling. Nuclear Science and Techniques, 2017, 28: 38.

60.L.L. Shen, S.N. Song, Z.T. Song, L. Li, T.Q. Guo, Y. Cheng, L.C. Wu, B. Liu, S.L. Feng. Properties of Ti-Sb-Te doped with SbSe alloy for application in nonvolatile phase change memory. Journal of Materials Science: Materials in Electronics, 2017, 28: 923-927.

59.Y. Liu, H. Wang, B. Liu, Y. Cheng, S.N. Song, L.C. Wu, D. Zhou, Z.T. Song. Trapping analysis and countermeasure for arsenic auto-doping in 40-nm epitaxial diode arrays and CMOS integration. Materials Science in Semiconductor Processing, 2017, 71: 326-331.

58. G.Y. Liu, L.C. Wu, M. Zhu, Z.T. Song, F. Rao, S.N. Song, Y. Cheng. The investigations of characteristics of Sb₂Te as a base phase-change material. Solid-State Electronics, 2017, 135: 31-36.

2016年

57.Y.H. Zheng, M.J. Xia, Y. Cheng*, F. Rao*, K.Y. Ding, W.L. Liu, J. Yu, Z.T. Song and S.L. Feng. Direct observation of metastable face-centered cubic Sb₂Te₃ crystal. Nano Research, 2016, 11: 3453-3462.

56.Y.H. Zheng, Y. Cheng*, M. Zhu, X.L. Ji, Q. Wang, S.N. Song, Z.T. Song, W.L. Liu and S.L. Feng. A candidate Zr-doped Sb₂Te alloy for phase change memory application.Applied Physics Letters, 2016, 108: 052107.

55.Y.H. Zheng, Y. Cheng*, Z.T. Song, W.J. Yin, M. Zhu, W.L. Liu, S.N. Song and S.L. Feng. Self-precipitated process of Te nanowire from Zr-doped Sb₂Te₃ film. Materials Science Forum, 2016, 848: 489.

54.L.L. Shen, S.N. Song, Z.T. Song, L. Li, T.Q. Guo, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu, S.L. Feng. Surface etching mechanism of carbon-doped Ge₂Sb₂Te₅ phase change material in fluorocarbon plasma. Applied Physics A-Materials Science & Processing, 2016, 122: 1-6.

53.K.Y. Ding, F. Rao*, S.L. Lv, Y. Cheng, W.L. Liu and Z.T. Song. Low-energy amorphization of Ti₁Sb₂Te₅ phase change alloy induced by TiTe₂ nano-lamellae. Scientific Reports, 2016, 6: 30645.

52.S.N. Song, L.L Shen, Z.T. Song, D.N. Yao, T.Q. Guo; L. Li, B. Liu, L.C. Wu, Y. Cheng, Y.Q. Ding, S.L. Feng. Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180N.

51.L.L. Shen, S.N. Song, Z.T. Song, L. Li, T.Q. Guo, B. Liu, L.C. Wu, Y. Cheng, S.L. Feng. Reactive ion etching effects on carbon-doped Ge₂Sb₂Te₅ phase change material in CF₄/Ar plasma. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180M.

50.Y.J. Chen, B. Zhang, Q.Q. Ding, Q.S. Deng, Y. Cheng, Z.T. Song, J.X. Li, Z. Zhang, X.D. Han. Microstructure evolution of the phase change material TiSbTe. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180B.

49.Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, S.N. Song, Y. Cheng, Z.T. Song, S.L. Feng. Electrical properties of Cr-doped Sb₂Te₃phase change material. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180H.

2015年

48.F. Rao, Z.T. Song, Y. Cheng, X.S. Liu, M.J. Xia, W. Li, K.Y. Ding, X.F. Feng, M. Zhu and S.L. Feng, Direct observation of titanium-centered octahedral in titanium–antimony–tellurium phase-change material. Nature communications, 2015, 6:10040.

47.M. Zhu, M.J. Xia, Z.T. Song, Y. Cheng, L.C. Wu, F. Rao, S.N. Song, M. Wang, Y.G. Lv and S.L. Feng, Understanding the crystallization behavior of as-deposited Ti–Sb–Te alloys through real-time radial distribution functions. Nanoscale, 2015, 7: 9935.

46.M.J. Xia, M. Zhu, Y.C. Wang, Z.T. Song, F. Rao, L.C. Wu, Y. Cheng and S.N. Song, Ti−Sb−Te alloy: a candidate for fast and long-life phase-change memory. ACS Applied Materials & Interfaces, 2015, 7: 7627.

45.Y. Cheng, S.N. Song, Z.H. Zhang, Z.T. Song, B. Liu, S.L. Feng and Z. Zhang, Electron beam annealing for component optimization in Si-Sb-Te material. Materials Science Forum, 2015, 815: 44.

44.L. Li, S.N. Song, Z.H. Zhang, Z.T. Song, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu and S.L. Feng, Investigation of Cr_0.06(Sb₄Te)_0.94 alloy for high-speed and high data-retention phase change random access memory applications. Applied Physics A, 2015, 120: 537.

43.L.L. Shen, S.N. Song, Z.H. Zhang, Z.T. Song, Y. Cheng, Y.Q. Zhu, X.H. Guo, W.J. Yin, D.N. Yao, B. Liu and S.L. Feng, Characteristics and mechanism of phase change material W_0.03Sb₂Te etched by Cl₂/BCl₃ inductively coupled plasmas. Thin Solid Films, 2015, 593: 67.

42.L. Li, S.N. Song, Z.H. Zhang, Y.Q. Zhu, Z.T. Song, Y. Cheng, S.L. Lv, B. Liu and L.L. Chen, Thickness dependent nano-crystallization in Ti_0.43Sb₂Te₃ films and its effect on devices. Thin Solid Films, 2015, 590: 13.

41.Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, R.R. Huo, Q. Zhang, S.N. Song, Y. Cheng and Z.T. Song, Cr-doped Ge₂Sb₂Te₅ for ultra-long data retention phase change memory. Applied Physics Letters, 2015, 107: 222101.

40.Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, R.R. Huo, M. Zhu, S.N. Song, S.L. Lv, Y. Cheng, Z.T. Song and S.L. Feng, Characterization of Cr-doped Sb₂Te₃ films and their application to phase-change memory. physica status solidi (RRL) - Rapid Research Letters, 2015, 9: 470.

39.S.N. Song, D.N. Yao, Z.T. Song, L.N. Gao, Z.H. Zhang, L. Li, L.L. Shen, L.C. Wu, B. Liu, Y. Cheng and S.L. Feng, Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon. Nanoscale Research Letters, 2015, 10:89.

2014年

38.宋志棠，成岩，相变存储器及其发展。《功能材料信息》，2014年第5期。

37.Y.C. Wang, X.G. Chen, Y. Cheng, X.L. Zhou, S.L. Lv, Y.F. Chen, Y.Q. Wang, M. Zhou, H.P. Chen, Y.Y. Zhang, Z.T. Song and G.M. Feng, RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming. IEEE Electron Device Letters, 2014, 35: 5.

36.Y.C. Wang, Y.F. Chen, D.L. Cai, Y. Cheng, X.G. Chen, Y.Q. Wang, M.J. Xia, M. Zhou, G.Z. Li, Y.Y. Zhang, D. Gao, Z.T. Song and G.M. Feng, Understanding the early cycling evolution behaviors for phase change memory application. Journal of Applied Physics, 2014, 116: 204503.

35.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, C. Peng, L. Zhang, D.C. Cao, X.H. Guo, W.J. Yin, L.C. Wu and B. Liu, Characteristics and mechanism of Al_1.3Sb₃Te etched by Cl₂/BCl₃ inductively coupled plasmas. Microelectronic Engineering, 2014, 115: 51.

34.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, M. Zhu, X.Y. Li, Y.Q. Zhu, X.H. Guo, W.J. Yin, L.C. Wu, B. Liu, S.L. Feng and D. Zhou, Etching of new phase change material Ti_0.5Sb₂Te₃ by Cl₂/Ar and CF₄/Ar inductively coupled plasmas.Applied Surface Science, 2014, 311: 68.

33.Z.H. Zhang, Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, B. Liu, Y.Q. Zhu, D. Zhou and S.L. Feng, Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application. Journal of Applied Physics, 2014, 116: 074304.

32.X.P. Wang, N.K. Chen, X.B. Li,* Y. Cheng, X.Q. Liu, M.J. Xia, Z.T. Song, X.D. Han, S.B. Zhang* and H.B. Sun*, Role of the nano amorphous interface in the crystallization of Sb₂Te₃ towards non-volatile phase change memory: insights from first principles. Physical Chemistry Chemical Physics, 2014, 16: 10810.

2013年

31.Y. Cheng, Y.F. Gu, Z.T. Song, S.N. Song, F. Rao, L.C. Wu, B. Liu and S.L. Feng, Investigation of Sb-rich Sb-Te binary films used as phase change material. In 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, Proceedings of SPIE, 2013, 8782: 87820H.

30.Y.G. Lu, S.N. Song, Z.T. Song, Y. Cheng, L.C. Wu and B. Liu, Crystallization behavior of Ge₂Te₃-TiO₂ film for phase-change random access memory application, In 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, Proceedings of SPIE, 2013, 8782: 87820K.

29.Z.H. Zhang, C. Peng, S.N. Song, Z.T. Song, Y. Cheng, K. Ren, X.Y. Li, F. Rao, B. Liu, S.L. Feng. Characterization of Cu doping on GeTe for phase change memory application. Journal of Applied Physics, 2013, 114: 244311.

28.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, F. Rao, L.C. Wu, B. Liu, B. Chen and Y.G. Lu, Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application. Applied Physics Letters, 2013, 103: 142112.

27.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, Y.F. Gu and B. Chen, Characterization of the thermal properties for Si-implanted Sb₂Te₃ phase change material. Applied Physics Letters, 2013, 102: 252106.

26.Y.F. Gu, S.N. Song, Z.T. Song, B.S. Yuan, Y. Cheng, Z.H. Zhang, B. Liu and S.L. Feng, Phase-change material Ge_0.61Sb₂Te for application in high-speed phase change random access memory, Applied Physics Letters, 2013, 102: 103110.

25.C. Peng, L.C. Wu, F. Rao, Z.T. Song, S.L. Lv, X.L. Zhou, X.F. Du, Y. Cheng, P.X. Yang and J.H. Chu, A simple method used to evaluate phase-change materials based on focused-ion beam technique. Applied Physics Letters, 2013, 102: 203510.

24.X.L. Zhou, L.C. Wu, Z.T. Song, Y. Cheng, F. Rao, K. Ren, S.N. Song, B. Liu and S.L. Feng, Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high performance phase-change memory. Acta Materialia, 2013, 61: 7324.

23.M. Zhu, L.C. Wu, F. Rao, Z.T. Song, X.L. Ji, D.N. Yao, Y. Cheng, S.L. Lv, S.N. Song, B. Liu and L. Xu, The effect of Titanium doping on the structure and phase change characteristics of Sb₄Te.Journal of Applied Physics, 2013, 114: 234302.

22.Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, X.Y. Liu, X.F. Du, B. Liu and S.L. Feng, Reactive ion etching of Si_xSb₂Te in CF₄/Ar plasma for nonvolatile phase-change memory device. Journal of Nanoscience and Nanotechnology, 2013, 13: 1594.

21.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, Y.F. Gu, L.C. Wu, B. Liu and S.L. Feng, Study on GeGaSbTe film for long data retention phase change memory application. Journal of Non Crystalline Solids, 2013, 381: 54.

2012年

20.N. Yan, Y. Cheng, X.Q. Liu, Z.T. Song and Z. Zhang, In situ transmission electron microscopy investigation of Si_xSb_100-x phase-change materials.Materials Letters, 2012, 84: 20-23.

19.F. Rao, Z.T. Song, Y. Cheng, M.J. Xia, K. Ren, L.C. Wu, B. Liu and S.L. Feng, Investigation of changes in band gap and density of localized states on phase transition for Ge₂Sb₂Te₅ and Si_3.5Sb₂Te₃ materials. Acta Materialia, 2012, 60: 323.

18.K. Ren, F. Rao, Z.T. Song, S.L. Lv, Y. Cheng, L.C. Wu, C. Peng, X.L. Zhou, M.J. Xia, B. Liu and S.L. Feng, Pseudobinary Al₂Te₃-Sb₂Te₃ material for high speed phase change memory application. Applied Physics Letters, 2012, 100: 052105.

17.Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, X.F. Du, B. Liu and S.L. Feng, Si_xSb₂Te materials with stable phase for phase change random access memory applications.Journal of Applied Physics, 2012, 111: 054319.

16.L. Zhang, L.X. Gu, X.D. Han, H. Huang, Y.N. Dai, Y. Cheng, Y. Wang, Z. Zhang, Y.Q. Wu, B. Liu and Z.T. Song, The influence of sputtering power on phase-change films. Electrochemical and Solid-State Letters, 2012, 15 (6): H1-H3.

15.Y.G. Lu, S.N. Song, Z.T. Song, W.C Ren, Y.L. Xiong, F. Rao, L.C. Wu, Y. Cheng, Bo. Liu, Superlattice-like GaSb/Sb₂Te₃ films for low-power phase change memory. Scripta Materialia, 2012, 66: 702.

14.X. Zhang, F. Rao, B. Liu, C. Peng, X.L. Zhou, D.N. Yao, X.H. Guo, S.N Song, S.N. Song, L.Y. Wang, Y. Cheng, L.C. Wu, Z.T. Song and S.L. Feng. Dry etching of new phase-change material Al_1.3Sb₃Te in CF₄/Ar plasma, Journal of Semiconductors, 2012, 33: 102003.

13.X. Zhang, B. Liu, C. Peng, F. Rao, X.L. Zhou, S.N. Song, L.Y. Wang, Y. Cheng, L.C. Wu, D.N. Yao, Z.T. Song and S.L. Feng. Study on Germanium Nitride as a buffer layer for phase change memory, Chinese Physics Letters, 2012, 29: 107201.

2011年

12.Y. Cheng, Z.T. Song, Y.F. Gu, S.N. Song, F. Rao, L.C. Wu, B. Liu and S.L Feng, Influence of silicon on the thermally induced crystallization process of Si-Sb₄Te phase change materials. Applied Physics Letters, 2011, 99: 261914.

11.X.L. Zhou, L.C. Wu, Z.T. Song, F. Rao, Y. Cheng, C. Peng, D.N. Yao, S.N. Song, B. Liu, S.L. Feng and B. Chen, Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state. Applied Physics Letters, 2011, 99: 032105.

10.F. Rao, Z.T. Song, K. Ren, X.L. Zhou, Y. Cheng, L.C. Wu and B. Liu, Si-Sb-Te materials for phase change memory applications. Nanotechnology, 2011, 22: 145702.

9.T. Zhang, Z.T. Song, Y.F. Gu, Y. Cheng, B. Liu and S.L. Feng, Mechanism of oxidation on Si₂Sb₂Te₅ phase change material and its application. Japanese Journal of Applied Physics, 2011, 50: 020202.

8.Y.F. Gu, Y. Cheng, S.N. Song, T. Zhang, Z.T. Song, Y.X. Liu, X.F. Du, B. Liu and S.L Feng, Advantages of Si_xSb₂Te phase-change material and its applications in phase-change random access memory. Scripta Materialia, 2011, 65: 622.

7.K. Ren, F. Rao, Z.T. Song, Y. Cheng, L.C. Wu, X.L. Zhou, Y.F. Gong, M.J. Xia, B. Liu and S.L. Feng, Study on the crystallization behaviors of Si₂Sb₂Te_x materials. Scripta Materialia, 2011, 64: 685.

6.L.C. Wu, X.L. Zhou, Z.T. Song, M. Zhu, Y. Cheng, F. Rao, S.N. Song, B. Liu and S.L. Feng, Sb-rich Si-Sb-Te phase-change material for phase-change random access memory applications, IEEE Transactions on Electron Devices. 2011, 58: 4423.

5.Y.G. Lu, S.N. Song, Z.T. Song, W.C. Ren, Y. Cheng and B. Liu, Crystallization process of amorphous GaSb₅Te₄ film for high-speed phase change memory. Applied Physics Express, 2011, 4: 094102.

4.Y.G. Lu, S.N. Song, Z.T. Song, W.C. Ren, C. Peng, Y. Cheng and B. Liu, Investigation of HfO₂ doping on GeTe for phase change memory. Solid State Sciences, 2011, 13: 1943.

2010年前

3.Y. Cheng, N. Yan, X.D. Han, Z. Zhang, T. Zhang, Z.T. Song, B. Liu and S.L. Feng, Thermally induced phase separation of Si-Sb-Te alloy. Journal of Non-Crystalline Solids, 2010, 356(18-19): 884-888.

2.Y. Cheng, X.D. Han, X.Q. Liu, K. Zheng, Z. Zhang, T. Zhang, Z.T. Song, B. Liu and S.L Feng. Self- extrusion of Te-nanowire from Si-Sb-Te thin films. Applied Physics Letters, 2008, 93: 183113.

1.T. Zhang, Y. Cheng, Z.T. Song, B. Liu, S.L Feng, X.D. Han, Z. Zhang and B. Chen. Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process. Scripta Materialia, 2008, 58: 977.

国家发明专利：

1.国家发明专利授权：成岩，黄荣，齐瑞娟，透射电镜和压电力显微镜通用的氮化硅薄膜窗口制备方法，授权日期：2020年4月30日，专利号：ZL 201811343252.9，专利权人：华东师范大学。

2.国家发明专利授权：成岩，黄荣，齐瑞娟，用于透射电镜原位通电芯片的拥有纳米级间距小电极的材料测试单元制备方法，授权日期：2020年1月7日，专利号：ZL 201810203499.4，专利权人：华东师范大学。

3.国家发明专利授权：齐瑞娟，成岩，黄荣，一种二维层状材料样品电学测试微电极的制备方法，授权日期：2020年2月18日，专利号：ZL 201910298039.9，专利权人：华东师范大学。

4.国家发明专利授权：齐瑞娟，彭晖，成岩，黄荣，一种微电极沉积掩膜的制备方法，授权日期：2020年1月7日，专利号：ZL 201910297991.7，专利权人：华东师范大学。

5.国家发明专利授权：成岩，郑勇辉，齐瑞娟，黄荣，张媛媛，一种多层存储结构透射电子显微镜原位电学测试单元制备方法，授权日期：2021年10月12日，专利号：ZL 201911006116.5，专利权人：华东师范大学。

6.国家发明专利授权：宋志棠，郑勇辉，成岩，刘卫丽，宋三年，朱敏，用于相变存储器的Zr-Sb-Te系列相变材料及其制备方法，授权日期：2017年7月14日，专利号：ZL 201510136878.2，专利权人：中科院上海微系统所。

7.国家发明专利申请：刘成，成岩，郑勇辉，肖威，齐瑞娟，黄荣，用于透射电镜原位电学测试的限制型存储单元制备方法，申请日期：2020年4月29日，申请号：202010356010.4，专利权人：华东师范大学。

8.国家发明专利申请：余坤，成岩，刘成，唐琼颜，齐瑞娟，黄荣，张媛媛，一种相变材料纳米线及其制备方法，申请日期：2019年12月25日，申请号：201911355126.X，专利权人：华东师范大学。

9.国家发明专利申请：宋志棠，任堃，沈佳斌，郑勇辉，成岩，一种用于原位电学测试的透射电镜样品的制备方法，申请日期：2017年11月28日，申请号：201711213560.5，专利权人：中科院上海微系统所。

10.国家发明专利申请：宋志棠，丁科元，成岩，相变存储器单元及其制备方法，申请日期：2017年4月1日，申请号：201710215955.2，专利权人：中科院上海微系统所。

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